Process
The wetting layer is epitaxially grown onto a surface using a molecular beam epitaxy (MBE) chamber at high temperatures. The temperatures required for wetting layer growth usually range from 400-500 degrees Celsius. If a self-assembled quantum dot is to form, an initial layer of atoms must first be placed on a surface. Due to the high elastic potential energy once a certain critical thickness is achieved, additional atoms group together to form the quantum dot to reduce this elastic energy. If further annealing of the quantum dot/wetting layer system is necessary, higher temperatures of up to 1100 degrees may be used.
Read more about this topic: Wetting Layer
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