Mathematical Model
The current in N-JFET due to a small voltage VDS is given by:
where
- IDSS = drain-source saturation current
- 2a = channel thickness
- W = width
- L = length
- q = electronic charge = 1.6 x 10-19 C
- μn = electron mobility
- Nd = n type doping concentration
In the saturation region:
In the linear region
or (in terms of ):
where is the pinch off voltage, the minimum voltage across G-S to completely turn off conduction. When is small compared with -, the device acts like a voltage controlled resistor.
Read more about this topic: Uses Of Jfet
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