Device Preparation
Thermally oxidized silicon is a traditional substrate for OFETs where the silicon dioxide serves as the gate insulator. The active FET layer is usually deposited onto this substrate using either (i) thermal evaporation, (ii) coating from organic solution, or (iii) electrostatic lamination. The first two techniques result in polycrystalline active layers; they are much easier to produce, but result in relatively poor transistor performance. Numerous variations of the solution coating technique (ii) are known, including dip-coating, spin-coating, inkjet printing and screen printing. The electrostatic lamination technique is based on manual peeling of a thin layer off a single organic crystal; it results in a superior single-crystalline active layer, yet it is more tedious. The thickness of the gate oxide and the active layer is below one micrometer.
Read more about this topic: Organic Field-effect Transistor
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