Summary Table
| technique | single exposure resolution | max. mask defect height | max. mask defect size | throughput | issues |
|---|---|---|---|---|---|
| 193 nm 1.35 NA (current) | 40 nm | 34 nm | 80 nm | 130 WPH | water immersion |
| 193 nm 1.7 NA | 30 nm | 34 nm | 60 nm | TBD | high-index materials needed (possibly prohibitive) |
| 157 nm 1.7 NA | 25 nm | 24 nm | 50 nm | development stopped | lack of materials; CaF2 required to replace fused silica (prohibitive) |
| 13.5 nm 0.25 NA (EUVL) | ~ 30 nm (secondary electrons) | 0.4 nm (prohibitive) | 40 nm | 4 WPH (prohibitive) | ionization; shot noise; throughput; mask defects |
| X-ray proximity printing | ~ 30 nm (secondary electrons) | > 100 nm | depends on proximity gap; matches mask (possibly prohibitive) | comparable to optical | mask membrane (prohibitive); source (possibly prohibitive) |
| Nanoimprint | N/A (matches template) | residual layer thickness | 0 nm (prohibitive) | >1 WPH | bubble defects (possibly prohibitive); master template lithography (prohibitive if electron-beam); master template inspection |
| Electron beam | ~ 30 nm (secondary electrons) | N/A | N/A | case-dependent but prohibitively slow | charging; shot noise; interactions between parallel electrons |
| Charged particle projection | ~ 30 nm (secondary electrons) | case-dependent for scattering membrane; N/A for stencil | case-dependent for scattering membrane; N/A for stencil | trade-off with exposure current, i.e., resolution (prohibitive) | charging; contamination of stencil openings; double stencil exposure required for islands; mask membrane (prohibitive) |
While only high-index immersion (which strictly is more a proposed extension of photolithography than an NGL) does not immediately face prohibitive issues, future developments may uncover severe enough problems to prohibit their use. The complexities of next-generation lithography development have always spurred the pursuit of ways of extending the use of incumbent lithographic materials, light sources, and tools.
Read more about this topic: Next-generation Lithography
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