Magnetoresistive Random-access Memory - History

History

Most of the following has been taken from mram-info web site:

• 1955 – Magnetic core memory had the same reading writing principle as MRAM
• 1988 – European scientists (Albert Fert and Peter Grünberg) discovered the "giant magnetoresistive effect" in thin-film structures.
• 1995 – Motorola (later to become Freescale) initiates work on MRAM development
• 2000 – IBM and Infineon established a joint MRAM development program.
• 2000 – Spintec laboratory's first Spin Torque Transfer patent.
• 2002 – NVE Announces Technology Exchange with Cypress Semiconductor.
• 2003 – A 128 kbit MRAM chip was introduced, manufactured with a 180 nm lithographic process

2004

• June – Infineon unveiled a 16-Mbit prototype, manufactured with a 180 nm lithographic process
• September – MRAM becomes a standard product offering at Freescale.
• October – Taiwan developers of MRAM tape out 1 Mbit parts at TSMC.
• October – Micron drops MRAM, mulls other memories.
• December – TSMC, NEC, Toshiba describe novel MRAM cells.
• December – Renesas Technology trumpets a high performance, high-reliability MRAM technology.
• Spintech laboratory's first observation of Thermal Assisted Switching (TAS) as MRAM approach.
• Crocus Technology is founded; the company is a developer of second-generation MRAM

2005

• January – Cypress Semiconductor samples MRAM, using NVE IP.
• March – Cypress to Sell MRAM Subsidiary.
• June – Honeywell posts data sheet for 1-Mbit rad-hard MRAM using a 150 nm lithographic process
• August – MRAM record: memory cell runs at 2 GHz.
• November – Renesas Technology and Grandis collaborate on development of 65 nm MRAM employing spin torque transfer (STT).
• November – NVE receives an SBIR grant to research cryptographic tamper-responsive memory.
• December – Sony announced the first lab-produced spin-torque-transfer MRAM, which utilizes a spin-polarized current through the tunneling magnetoresistance layer to write data. This method consumes less power and is more scalable than conventional MRAM. With further advances in materials, this process should allow for densities higher than those possible in DRAM.
• December – Freescale Semiconductor Inc. demonstrates an MRAM that uses magnesium oxide, rather than an aluminum oxide, allowing for a thinner insulating tunnel barrier and improved bit resistance during the write cycle, thereby reducing the required write current.
• Spintec laboratory gives Crocus Technology exclusive license on its patents.