Magnetoresistive Random-access Memory
Magnetoresistive random-access memory (MRAM) is a non-volatile random-access memory technology that has been under development since the 1990s. Continued increases in density of existing memory technologies – notably flash RAM and DRAM – kept it in a niche role in the market, but its proponents believe that the advantages are so overwhelming that magnetoresistive RAM will eventually become dominant for all types of memory, becoming a universal memory.
Read more about Magnetoresistive Random-access Memory: Description, History, Applications
Famous quotes containing the word memory:
“Why is it that we have enough memory to recollect the most minute circumstances of something that has happened to us, but not enough to remember how many times we have recounted them to the same person?”
—François, Duc De La Rochefoucauld (1613–1680)