Magnetoresistive Random-access Memory
Magnetoresistive random-access memory (MRAM) is a non-volatile random-access memory technology that has been under development since the 1990s. Continued increases in density of existing memory technologies – notably flash RAM and DRAM – kept it in a niche role in the market, but its proponents believe that the advantages are so overwhelming that magnetoresistive RAM will eventually become dominant for all types of memory, becoming a universal memory.
Read more about Magnetoresistive Random-access Memory: Description, History, Applications
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