Physical Implementation
The 8080 integrated circuit used non-saturated enhancement load nMOS gates, demanding extra voltages (for the load-gate bias). It was manufactured in a silicon gate process using a minimum feature size of 6 µm. A single layer of metal was used to interconnect the approximately 6,000 transistors in the design, but the higher resistance polysilicon layer, which required higher voltage for some interconnects, was implemented with transistor gates. The die size was approximately 20 mm².
Read more about this topic: Intel 8080
Famous quotes containing the word physical:
“When one walks, one is brought into touch first of all with the essential relations between one’s physical powers and the character of the country; one is compelled to see it as its natives do. Then every man one meets is an individual. One is no longer regarded by the whole population as an unapproachable and uninteresting animal to be cheated and robbed.”
—Aleister Crowley (1875–1947)