Indium Chalcogenides - InS, InSe, InTe

InS, InSe, InTe

InS, InSe

InS and InSe are similar, both contain In₂4+ and have a layer structure. InS for instance can be formulated In₂4+ 2S2−. InSe has two crystal forms β-InSe and γ-InSe that differ only in the way that the layers are stacked. InSe is a semiconductor and a phase change material and has potential as an optical recording medium.

InTe

InTe in contrast to InS and InSe is a mixed valence indium compound containing In+ and In3+ and can be formulated as In+ In3+ 2Te2−. It is similar to TlSe and has tetrahedral InTe₄ units that share edges. It has potential for use in photovoltaic devices.