Holographic Data Storage - Effect of Annealing

Effect of Annealing

For a doubly doped lithium niobate (LiNbO3) crystal there exists an optimum oxidation/reduction state for desired performance. This optimum depends on the doping levels of shallow and deep traps as well as the annealing conditions for the crystal samples. This optimum state generally occurs when 95 – 98% of the deep traps are filled. In a strongly oxidized sample holograms cannot be easily recorded and the diffraction efficiency is very low. This is because the shallow trap is completely empty and the deep trap is also almost devoid of electrons. In a highly reduced sample on the other hand, the deep traps are completely filled and the shallow traps are also partially filled. This results in very good sensitivity (fast recording) and high diffraction efficiency due to the availability of electrons in the shallow traps. However during readout, all the deep traps get filled quickly and the resulting holograms reside in the shallow traps where they are totally erased by further readout. Hence after extensive readout the diffraction efficiency drops to zero and the hologram stored cannot be fixed.

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