Cryogenic Process
In cryogenic-DRIE, the wafer is chilled to −110 °C (163 K). The low temperature slows down the chemical reaction that produces isotropic etching. However, ions continue to bombard upward-facing surfaces and etch them away. This process produces trenches with highly vertical sidewalls. The primary issues with cryo-DRIE is that the standard masks on substrates crack under the extreme cold, plus etch by-products have a tendency of depositing on the nearest cold surface, i.e. the substrate or electrode.
Read more about this topic: Deep Reactive-ion Etching
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“If thinking is like perceiving, it must be either a process in which the soul is acted upon by what is capable of being thought, or a process different from but analogous to that. The thinking part of the soul must therefore be, while impassable, capable of receiving the form of an object; that is, must be potentially identical in character with its object without being the object. Mind must be related to what is thinkable, as sense is to what is sensible.”
—Aristotle (384–322 B.C.)