The Czochralski process is a method of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts, and synthetic gemstones. The process is named after Polish scientist Jan Czochralski, who invented the method in 1916 while investigating the crystallization rates of metals.
The most important application may be the growth of large cylindrical ingots, or boules, of single crystal silicon. Other semiconductors, such as gallium arsenide, can also be grown by this method, although lower defect densities in this case can be obtained using variants of the Bridgman-Stockbarger technique.
Read more about Czochralski Process: Production of Czochralski Silicon, Size of Crystals, Impurity Incorporation, Gallery
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