Resistive random-access memory (RRAM or ReRAM) is a non-volatile memory type under development by a number of different companies, some of which have patented versions of ReRAM. The technology bears some similarities to CBRAM and phase change memory.
In February 2012 Rambus bought a ReRAM company called Unity Semiconductor for $35 million.
Panasonic has launched a ReRAM evaluation kit in May 2012 based on a tantalum oxide 1T1R (1 transistor - 1 resistor) memory cell architecture.
Different forms of ReRAM have been disclosed, based on different dielectric materials, spanning from perovskites to transition metal oxides to chalcogenides. Even silicon dioxide has been shown to exhibit resistive switching as early as 1967, and has recently been revisited.
Leon Chua, who is considered to be the father of non-linear circuit theory, has argued that all 2-terminal non-volatile memory devices including ReRAM should be considered memristors. Stan Williams of HP Labs has also argued that all ReRAM should be considered to be a memristor.
Read more about Resistive Random-access Memory: Mechanism, Material Systems For Resistive Memory Cells, Demonstrations, Future Applications
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