Material Systems For Resistive Memory Cells
A large number of inorganic and organic material systems showing thermal or ionic resistive switching effects have been demonstrated in the literature. These can be grouped into the following categories:
1. phase change chalcogenides like Ge2Sb2Te5 or AgInSbTe
2. binary transition metal oxides like NiO or TiO2
3. perovskites like Sr(Zr)TiO3 or PCMO
4. solid-state electrolytes like GeS, GeSe, SiOx or Cu2S
5. organic charge transfer complexes like CuTCNQ
6. organic donor–acceptor systems like Al AIDCN
7. various molecular systems
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