Material Systems For Resistive Memory Cells
A large number of inorganic and organic material systems showing thermal or ionic resistive switching effects have been demonstrated in the literature. These can be grouped into the following categories:
1. phase change chalcogenides like Ge2Sb2Te5 or AgInSbTe
2. binary transition metal oxides like NiO or TiO2
3. perovskites like Sr(Zr)TiO3 or PCMO
4. solid-state electrolytes like GeS, GeSe, SiOx or Cu2S
5. organic charge transfer complexes like CuTCNQ
6. organic donor–acceptor systems like Al AIDCN
7. various molecular systems
Read more about this topic: Resistive Random-access Memory
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