Demonstrations
Papers at the IEDM Conference in 2007 suggested for the first time that ReRAM exhibits lower programming currents than PRAM or MRAM without sacrificing programming performance, retention or endurance. On April 30, 2008 HP announced that they had discovered the memristor, originally envisioned as a missing 4th fundamental circuit element by Leon Chua in 1971. On July 8 they announced they would begin prototyping ReRAM using their memristors. At IEDM 2008, the highest performance ReRAM technology to date was demonstrated by ITRI, showing switching times less than 10 ns and currents less than 30 microamps. At IEDM 2010, ITRI also broke the speed record, showing <0.3 ns switching time, while also showing process and operation improvements to allow yield up to 100%. Also, IMEC presented several updates of their ReRAM program at the 2012 Symposia on VLSI Technology and Circuits, including a solution with a 500nA operating current.
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