Structure
The JFET is a long channel of semiconductor material, doped to contain an abundance of positive charge carriers or holes (p-type), or of negative carriers or electrons (n-type). Ohmic contacts at each end form the source (S) and drain (D). A pn-junction is formed on one or both sides of the channel, or surrounding it, using a region with doping opposite to that of the channel, and biased using an ohmic gate contact (G).
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