The Slowing-down Process in Solids
In the beginning of the slowing-down process at high energies, the ion is slowed down mainly by electronic stopping, and it moves almost in a straight path. When the ion has slowed down sufficiently, the collisions with nuclei (the nuclear stopping) become more and more probable, finally dominating the slowing down. When atoms of the solid receive significant recoil energies when struck by the ion, they will be removed from their lattice positions, and produce a cascade of further collisions in the material. These collision cascades are the main cause of damage production during ion implantation in metals and semiconductors.
When the energies of all atoms in the system have fallen below the threshold displacement energy, the production of new damage ceases, and the concept of nuclear stopping is no longer meaningful. The total amount of energy deposited by the nuclear collisions to atoms in the materials is called the nuclear deposited energy.
The inset in the figure shows a typical range distribution of ions deposited in the solid. The case shown here might for instance be the slowing down of a 1 MeV silicon ion in silicon. The mean range for a 1 MeV ion is typically in the micrometer range.
Read more about this topic: Stopping Power (particle Radiation)
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