SOS Structure
An example of an SOS product manufacturer is San Diego, California-based company Peregrine Semiconductor. The application of epitaxial growth of silicon on sapphire substrates for fabricating MOS devices involves a silicon purification process that mitigates crystal defects which result from a mismatch between sapphire and silicon lattices. The Peregrine PE42612 SP4T switch is formed on an SOS substrate where the final thickness of silicon is approximately 95 nm. Silicon is recessed in regions outside the polysilicon gate stack by poly oxidation and further recessed by the sidewall spacer formation process to a thickness of approximately 78 nm.
Read more about this topic: Silicon On Sapphire, Substrate Analysis
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