Use in High-performance Radio-Frequency (RF) Applications
In 1990, Peregrine Semiconductor began development of an SOI process technology utilizing a standard 0.5 um CMOS node and an enhanced sapphire substrate. Its patented silicon on sapphire (SOS) process is widely used in high-performance RF applications. The intrinsic benefits of the insulating sapphire substrate allow for high isolation, high linearity and electro-static discharge (ESD) tolerance. Multiple other companies have also applied SOI technology to successful RF applications in smartphones and cellular radios.
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