In electronics, a short-channel effect is an effect whereby a MOSFET in which the channel length is the same order of magnitude as the depletion-layer widths (xdD, xdS) of the source and drain junction, behaves differently from other MOSFETs.
As the channel length L is reduced to increase both the operation speed and the number of components per chip, the so-called short-channel effects arise.
The short-channel effects are attributed to two physical phenomena:
- the limitation imposed on electron drift characteristics in the channel,
- the modification of the threshold voltage due to the shortening channel length.
In particular five different short-channel effects can be distinguished:
- drain-induced barrier lowering and punchthrough
- surface scattering
- velocity saturation
- impact ionization
- hot electron effect
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