Schottky Diode - Silicon Carbide Schottky Diode

Silicon Carbide Schottky Diode

Schottky diodes constructed from silicon carbide have a much lower reverse leakage current than silicon Schottky diodes, and higher reverse voltage. As of 2011 they were available from manufacturers in variants up to 1700 V.

Silicon carbide has a high thermal conductivity, and temperature has little influence on its switching and thermal characteristics. With special packaging silicon carbide Schottky diodes can operate at junction temperatures of over 500 K (about 200 °C), which allows passive radiative cooling in aerospace applications.