Semiconductor Diodes and Transistors
As listed above, he first letter gives the semiconductor type; the second letter denotes the intended use:
| 2nd letter | Usage | Example |
|---|---|---|
| A | Low power/small signal diode | AA119, BA121 |
| B | Varicap diode | BB105G |
| C | Small signal transistor, RthG > 15K/W | BC546C |
| D | High power, low frequency power transistor, RthG ≤ 15K/W | BD139 |
| E | Tunnel (Esaki-)diode | AE100 |
| F | Low power, RF (high frequency) Bipolar or FET, RthG > 15K/W | BF245 |
| G | Hybrid device | BGY32, BGY585 |
| H | Hall effect sensor/diode | |
| L | High frequency, high power transistor (for transmitters), RthG ≤ 15K/W | BLW34 |
| M | Ring modulator-type frequency mixer | |
| N | Opto-isolator | CNY17 |
| Q | Radiation generator (LED) | CQY99 |
| R | Low-power control or switching device: Thyristors, Diacs, Triacs, UJTs, Programmable uni-junction transistors (PUT), Silicon bidirectional switch (SBS), Opto-triacs etc. | BR100 |
| S | Low-power switching transistor, bipolar or MOSFET, RthG > 15K/W | BS170 |
| T | High-power control or switching device: Thyristors, TRIACs, Silicon bidirectional switch (SBS), etc. | BT138 |
| U | High-power switching transistors, bipolar or MOSFET, RthG ≤ 15K/W | BU508, BUZ11 |
| V | Antenna | |
| W | Surface acoustic wave device | |
| X | Frequency multiplier: Varactor, Step recovery diode | |
| Y | High-power rectifying diode | BY228 |
| Z | Avalanche, TVS, Zener diode | BZY91 |
A 3-digit sequence number (or one letter then 2 digits, for industrial types) follows. Examples are:
| Prefix class | Usage | Example |
|---|---|---|
| AC | Germanium small signal transistor | AC126 |
| AF | Germanium RF transistor | AF117 |
| BC | Silicon, small signal transistor ("allround") | BC548B |
| BD | Silicon, power transistor | BD139 |
| BF | Silicon, RF (high frequency) BJT or FET | BF245 |
| BS | Silicon, switching transistor Bipolar or MOSFET) | BS170 |
| BL | Silicon, high frequency, high power (for transmitters) | BLW34 |
| BU | Silicon, high voltage (for CRT horizontal deflection circuits) | BU508 |
With early devices, the number indicated the case type. Suffixes may be used, such as a letter (e.g. "C" often means high hFE, such as in: BC549C). Other codes may follow to show gain (e.g. BC327-25) or voltage rating (e.g. BUK854-800A). A BC546 might only be marked "C546", thus possibly creating confusion with JIS abbreviated markings, because a transistor marked "C546" might also be a 2SC546.
- Short summary of semiconductor diode and transistor designations
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