Optical Proximity Correction - Impact of Multiple-etch Patterning

Impact of Multiple-etch Patterning

In contrast to multiple exposure of the same photoresist film, multiple layer patterning entails repeated photoresist coating, deposition, and etching to pattern the same device layer. This gives an opportunity to use looser design rules to pattern the same layer. Depending on the lithography tool used to image at these looser design rules, the OPC will be different. Multiple-etch patterning may become a popular technique for future technology generations. A specific form of multiple-etch patterning, using sidewall sacrificial features, is currently the only demonstrated way of systematically patterning features less than 10 nm. The minimum half-pitch corresponds to the deposited thickness of the sacrificial feature.

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