Future
A new type of magnetic storage, called Magnetoresistive Random Access Memory or MRAM, is being produced that stores data in magnetic bits based on the tunnel magnetoresistance (TMR) effect. Its advantage is non-volatility, low power usage, and good shock robustness. The 1st generation that was developed was produced by Everspin Technologies, and utilized field induced writing. The 2nd generation is being developed through two approaches: Thermal Assisted Switching (TAS) which is currently being developed by Crocus Technology, and Spin Torque Transfer (STT) on which Crocus, Hynix, IBM, and several other companies are working. However, with storage density and capacity orders of magnitude smaller than an HDD, MRAM is useful in applications where moderate amounts of storage with a need for very frequent updates are required, which flash memory cannot support due to its limited write endurance.
Read more about this topic: Magnetic Storage
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“The danger of the past was that men became slaves. The danger of the future is that men may become robots. True enough, robots do not rebel. But given man’s nature, robots cannot live and remain sane, they become “Golems,” they will destroy their world and themselves because they cannot stand any longer the boredom of a meaningless life.”
—Erich Fromm (1900–1980)
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—Antonio Gramsci (1891–1937)
“The planet’s survival has become so uncertain that any effort, any thought that presupposes an assured future amounts to a mad gamble.”
—Elias Canetti (b. 1905)