Future
A new type of magnetic storage, called Magnetoresistive Random Access Memory or MRAM, is being produced that stores data in magnetic bits based on the tunnel magnetoresistance (TMR) effect. Its advantage is non-volatility, low power usage, and good shock robustness. The 1st generation that was developed was produced by Everspin Technologies, and utilized field induced writing. The 2nd generation is being developed through two approaches: Thermal Assisted Switching (TAS) which is currently being developed by Crocus Technology, and Spin Torque Transfer (STT) on which Crocus, Hynix, IBM, and several other companies are working. However, with storage density and capacity orders of magnitude smaller than an HDD, MRAM is useful in applications where moderate amounts of storage with a need for very frequent updates are required, which flash memory cannot support due to its limited write endurance.
Read more about this topic: Magnetic Storage
Famous quotes containing the word future:
“... the loss of belief in future states is politically, though certainly not spiritually, the most significant distinction between our present period and the centuries before. And this loss is definite. For no matter how religious our world may turn again, or how much authentic faith still exists in it, or how deeply our moral values may be rooted in our religious systems, the fear of hell is no longer among the motives which would prevent or stimulate the actions of a majority.”
—Hannah Arendt (1906–1975)
“The circuited city of the future will not be the huge hunk of concentrated real estate created by the railway. It will take on a totally new meaning under conditions of very rapid movement. It will be an information megalopolis.”
—Marshall McLuhan (1911–1980)
“I shall soon be six-and-twenty. Is there anything in the future that can possibly console us for not being always twenty-five?”
—George Gordon Noel Byron (1788–1824)