Future
A new type of magnetic storage, called Magnetoresistive Random Access Memory or MRAM, is being produced that stores data in magnetic bits based on the tunnel magnetoresistance (TMR) effect. Its advantage is non-volatility, low power usage, and good shock robustness. The 1st generation that was developed was produced by Everspin Technologies, and utilized field induced writing. The 2nd generation is being developed through two approaches: Thermal Assisted Switching (TAS) which is currently being developed by Crocus Technology, and Spin Torque Transfer (STT) on which Crocus, Hynix, IBM, and several other companies are working. However, with storage density and capacity orders of magnitude smaller than an HDD, MRAM is useful in applications where moderate amounts of storage with a need for very frequent updates are required, which flash memory cannot support due to its limited write endurance.
Read more about this topic: Magnetic Storage
Famous quotes containing the word future:
“Give me insight into today and you may have the antique and future worlds.”
—Ralph Waldo Emerson (1803–1882)
“Thou, too, sail on, O Ship of State!
Sail on, O Union, strong and great!
Humanity with all its fears,
With all the hopes of future years,
Is hanging breathless on thy fate!”
—Henry Wadsworth Longfellow (1807–1882)
“Common sense should tell us that reading is the ultimate weapon—destroying ignorance, poverty and despair before they can destroy us. A nation that doesn’t read much doesn’t know much. And a nation that doesn’t know much is more likely to make poor choices in the home, the marketplace, the jury box and the voting booth...The challenge, therefore, is to convince future generations of children that carrying a book is more rewarding than carrying guns.”
—Jim Trelease (20th century)