Future
A new type of magnetic storage, called Magnetoresistive Random Access Memory or MRAM, is being produced that stores data in magnetic bits based on the tunnel magnetoresistance (TMR) effect. Its advantage is non-volatility, low power usage, and good shock robustness. The 1st generation that was developed was produced by Everspin Technologies, and utilized field induced writing. The 2nd generation is being developed through two approaches: Thermal Assisted Switching (TAS) which is currently being developed by Crocus Technology, and Spin Torque Transfer (STT) on which Crocus, Hynix, IBM, and several other companies are working. However, with storage density and capacity orders of magnitude smaller than an HDD, MRAM is useful in applications where moderate amounts of storage with a need for very frequent updates are required, which flash memory cannot support due to its limited write endurance.
Read more about this topic: Magnetic Storage
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“We must choose. Be a child of the past with all its crudities and imperfections, its failures and defeats, or a child of the future, the future of symmetry and ultimate success.”
—Frances E. Willard 1839–1898, U.S. president of the Women’s Christian Temperance Union 1879-1891, author, activist. The Woman’s Magazine, pp. 137-40 (January 1887)
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