Future
A new type of magnetic storage, called Magnetoresistive Random Access Memory or MRAM, is being produced that stores data in magnetic bits based on the tunnel magnetoresistance (TMR) effect. Its advantage is non-volatility, low power usage, and good shock robustness. The 1st generation that was developed was produced by Everspin Technologies, and utilized field induced writing. The 2nd generation is being developed through two approaches: Thermal Assisted Switching (TAS) which is currently being developed by Crocus Technology, and Spin Torque Transfer (STT) on which Crocus, Hynix, IBM, and several other companies are working. However, with storage density and capacity orders of magnitude smaller than an HDD, MRAM is useful in applications where moderate amounts of storage with a need for very frequent updates are required, which flash memory cannot support due to its limited write endurance.
Read more about this topic: Magnetic Storage
Famous quotes containing the word future:
“You have too much of a life yet before you, and have shown too much of promise as an officer, for your future to be lightly surrendered.”
—Abraham Lincoln (1809–1865)
“The present hour is always wealthiest when it is poorer than the future ones, as that is the pleasantest site which affords the pleasantest prospects.”
—Henry David Thoreau (1817–1862)
“The future is just as much a condition of the present as is the past. “What shall be and must be is the ground of that which is.””
—Friedrich Nietzsche (1844–1900)