Indium gallium nitride (InGaN, InxGa1-xN) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III/group V direct bandgap semiconductor. Its bandgap can be tuned by varying the amount of indium in the alloy. The ratio of In/Ga is usually between 0.02/0.98 and 0.3/0.7.
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