Applications
HEMT devices using InGaAs channels are one of the fastest types of transistor.
InGaAs is also a popular material in infrared detectors. It is widely replacing germanium as a detector material mainly due to lower dark current (internally generated current). It is used as the detector material in some short-wave infrared cameras. InGaAs also has lower multiplication noise than germanium when used as the active multiplication layer of an avalanche photodiode.
InGaAs can be used as a laser medium. Devices have been constructed operating at wavelengths of 905 nm, 980 nm, 1060 nm, and 1300 nm. InGaAs quantum dots on GaAs have also been studied as lasers.
In0.015Ga0.985As can be used as an intermediate band-gap junction in multi-junction photovoltaic cells with a perfect lattice match to Ge. The perfect lattice match to Ge reduces defect density, improving cell efficiency.
Read more about this topic: Indium Gallium Arsenide