Flash Memory - Principles of Operation

Principles of Operation

Flash memory stores information in an array of memory cells made from floating-gate transistors. In traditional single-level cell (SLC) devices, each cell stores only one bit of information. Some newer flash memory, known as multi-level cell (MLC) devices, including triple-level cell (TLC) devices, can store more than one bit per cell by choosing between multiple levels of electrical charge to apply to the floating gates of its cells.

The floating gate may be conductive (typically polysilicon in most kinds of flash memory) or non-conductive (as in SONOS flash memory).

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