Fabrication
The hybrid silicon laser is fabricated by a technique called plasma assisted wafer bonding. Silicon waveguides are first fabricated on a silicon on insulator (SOI) wafer. This SOI wafer and the un-patterned III-V wafer are then exposed to an oxygen plasma before being pressed together at a low (for semiconductor manufacturing) temperature of 300C for 12hours. This process fuses the two wafers together. The III-V wafer is then etched into mesas to expose electrical layers in the epitaxial structure. Metal contacts are fabricated on these contact layers allowing electrical current to flow to the active region.
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