High Electron Mobility Transistor - Invention

Invention

The invention of the HEMT is usually attributed to Takashi Mimura (三村 高志) (Fujitsu, Japan). In America, Ray Dingle and his co-workers in Bell Laboratories also played an important role in the invention of the HEMT. In Europe, Daniel Delagebeaudeuf and Trong Linh Nuyen from Thomson-CSF (France) filed for a patent of this device on the 28th of March 1979.

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