Molecular Beam Epitaxy
Commercially, GaN crystals can be grown using molecular beam epitaxy. This process can be further modified to reduce dislocation densities. First, an ion beam is applied to the growth surface in order to create nanoscale roughness. Then, the surface is polished. This process takes place in a vacuum.
Read more about this topic: Gallium Nitride, Synthesis
Famous quotes containing the word beam:
“Why beholdest thou the mote that is in thy brother’s eye, but considerest not the beam that is in thine own eye?”
—Bible: New Testament Jesus, in Matthew, 7:3.
From the Sermon on the Mount.
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