Molecular Beam Epitaxy
Commercially, GaN crystals can be grown using molecular beam epitaxy. This process can be further modified to reduce dislocation densities. First, an ion beam is applied to the growth surface in order to create nanoscale roughness. Then, the surface is polished. This process takes place in a vacuum.
Read more about this topic: Gallium Nitride, Synthesis
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“How can one beam alone support a house?”
—Chinese proverb.
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