Resource Requirements: EUV Vs. ArF Immersion Double Patterning
| Utility | 200 W output EUV | 90 W output ArF immersion double patterning |
|---|---|---|
| Electrical power (kW) | 532 | 49 |
| Cooling water flow (L/min) | 1600 | 75 |
| Gas lines | 6 | 3 |
Source: Gigaphoton, Sematech Symposium Japan, September 15, 2010
The required utility resources are significantly larger for EUV compared to 193 nm immersion, even with double patterning. Hynix reported at the 2009 EUV Symposium that the wall plug efficiency was ~0.02% for EUV, i.e., to get 200 W at intermediate focus for 100 WPH, one would require 1MW of input power, compared to 165 kW for an ArF immersion scanner, and that even at the same throughput, the footprint of the EUV scanner was ~3x the footprint of an ArF immersion scanner, resulting in productivity loss. Additionally, to confine ion debris, a superconducting magnet may be required.
Read more about this topic: Extreme Ultraviolet Lithography
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