Dynamic Random-access Memory - Operation Principle

Operation Principle

DRAM is usually arranged in a rectangular array of charge storage cells consisting of one capacitor and transistor per data bit. The figure to the right shows a simple example with a 4 by 4 cell matrix. Modern DRAM matrices are many thousands of cells in height and width.

The long horizontal lines connecting each row are known as word-lines. Each column of cells is composed of two bit-lines, each connected to every other storage cell in the column (the illustration to the right does not include this important detail). They are generally known as the + and − bit-lines.

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