SDRAM - Generations of SDRAM - DDR3 SDRAM

DDR3 SDRAM

DDR3 continues the trend, doubling the minimum read or write unit to 8 consecutive words. This allows another doubling of bandwidth and external bus rate without having to change the clock rate of internal operations, just the width. To maintain 800–1600 M transfers/s (both edges of a 400–800 MHz clock), the internal RAM array has to perform 100–200 M fetches per second.

Again, with every doubling, the downside is the increased latency. As with all DDR SDRAM generations, commands are still restricted to one clock edge and command latencies are given in terms of clock cycles, which are half the speed of the usually quoted transfer rate (a CAS latency of 8 with DDR3-800 is 8/(400 MHz) = 20 ns, exactly the same latency of CAS2 on PC100 SDR SDRAM).

DDR3 memory chips are being made commercially, and computer systems using them were available from the second half of 2007, with significant usage from 2008 onwards. Initial clock rates were 400 and 533 MHz, which are described as DDR3-800 and DDR3-1066 (PC3-6400 and PC3-8500 modules), but 667 and 800 MHz, described as DDR3-1333 and DDR3-1600 (PC3-10600 and PC3-12800 modules) are now common. Performance up to DDR3-2800 (PC3 22400 modules) are available for a price.