Common Power Devices
Some common power devices are the power diode, thyristor, power MOSFET, and IGBT. The power diode and power MOSFET operate on similar principles to their low-power counterparts, but are able to carry a larger amount of current and are typically able to support a larger reverse-bias voltage in the off-state.
Structural changes are often made in a power device in order to accommodate the higher current density, higher power dissipation, and/or higher reverse breakdown voltage. The vast majority of the discrete (i.e., non-integrated) power devices are built using a vertical structure, whereas small-signal devices employ a lateral structure. With the vertical structure, the current rating of the device is proportional to its area, and the voltage blocking capability is achieved in the height of the die. With this structure, one of the connections of the device is located on the bottom of the semiconductor die.
Read more about this topic: Power Semiconductor Device
Famous quotes containing the words common, power and/or devices:
“He has the common feeling of his profession. He enjoys a statement twice as much if it appears in fine print, and anything that turns up in a footnote ... takes on the character of divine revelation.”
—Margaret Halsey (b. 1910)
“I have no concern with any economic criticisms of the communist system; I cannot enquire into whether the abolition of private property is expedient or advantageous. But I am able to recognize that the psychological premises on which the system is based are an untenable illusion. In abolishing private property we deprive the human love of aggression of one of its instruments ... but we have in no way altered the differences in power and influence which are misused by aggressiveness.”
—Sigmund Freud (1856–1939)
“So that with much ado I was corrupted, and made to learn the dirty devices of this world.
Which now I unlearn, and become, as it were, a little child again that I may enter into the Kingdom of God.”
—Thomas Traherne (1636–1674)