Carrier Transport
The carrier transport in OFET is specific for two-dimensional (2D) carrier propagation through the device. Various experimental techniques were used for this study, such as Haynes - Shockley experiment on the transit times of injected carriers, time-of-flight (TOF) experiment for the determination of carrier mobility, pressure-wave propagation experiment for probing electric-field distribution in insulators, organic monolayer experiment for probing orientational dipolar changes, optical time-resolved second harmonic generation (TRM-SHG), etc. Whereas carriers propagate through polycrystalline OFETs in a diffusion-like (trap-limited) manner, they move through the conduction band in the best single-crystalline OFETs.
The most important parameter of OFET carrier transport is carrier mobility. Its evolution over the years of OFET research is shown in the graph for polycrystalline and single crystalline OFETs. The horizontal lines indicate the comparison guides to the main OFET competitors – amorphous (a-Si) and polycrystalline silicon. The graph reveals that the mobility in polycrystalline OFETs is comparable to that of a-Si whereas mobility in rubrene-based OFETs (20–40 cm2/(V·s)) approaches that of best poly-silicon devices.
Read more about this topic: Organic Field-effect Transistor
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