Magnetoresistance

Magnetoresistance is the property of a material to change the value of its electrical resistance when an external magnetic field is applied to it. The effect was first discovered by William Thomson (more commonly known as Lord Kelvin) in 1856, but he was unable to lower the electrical resistance of anything by more than 5%. This effect was later called ordinary magnetoresistance (OMR). More recent researchers discovered materials (and multilayer devices) showing giant magnetoresistance (GMR), colossal magnetoresistance (CMR) and magnetic tunnel effect (TMR). Generally, resistance can depend either on magnetization (controlled by applied magnetic field) or on magnetic field directly.

Read more about Magnetoresistance:  Discovery, Geometrical Magnetoresistance, Anisotropic Magnetoresistance (AMR)