LOCOS - Process

Process

Typical process steps are the following:

I. Preparation of silicon substrate (layer 1)
II. CVD deposition of SiO2, pad/buffer oxide (layer 2)
III. CVD deposition of Si3N4, nitride mask (layer 3)
IV. Etching of nitride layer (layer 3) and silicon oxide layer (layer 2)
V. Thermal growth of silicon oxide (structure 4)
VI. Further growth of thermal silicon oxide (structure 4)
VII. Removal of nitride mask (layer 3)

There are 4 basic layers/structures:

  1. Si, silicon substrate, wafer
  2. SiO2, buffer oxide (pad oxide), chemical vapor deposition silicon oxide
  3. Si3N4, nitride mask
  4. SiO2, insulation oxide, thermal o

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