History
The field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925 and by Oskar Heil in 1934, but practical semi-conducting devices (the JFET) were only developed much later after the transistor effect was observed and explained by the team of William Shockley at Bell Labs in 1947. The MOSFET, which largely superseded the JFET and had a more profound effect on electronic development, was first proposed by Dawon Kahng in 1960.
Read more about this topic: Field-effect Transistor
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—David Hume (1711–1776)