Compensation
In most cases many types of impurities will be present in the resultant doped semiconductor. If an equal number of donors and acceptors are present in the semiconductor, the extra core electrons provided by the former will be used to satisfy the broken bonds due to the latter, so that doping produces no free carriers of either type. This phenomenon is known as compensation, and occurs at the p-n junction in the vast majority of semiconductor devices. Partial compensation, where donors outnumber acceptors or vice versa, allows device makers to repeatedly reverse (invert) the type of a given portion of the material by applying successively higher doses of dopants, so-called counterdoping. Most modern semiconductors are made by successive selective counterdoping steps to create the necessary P and N type areas.
Although compensation can be used to increase or decrease the number of donors or acceptors, the electron and hole mobility is always decreased by compensation because mobility is affected by the sum of the donor and acceptor ions.
Read more about this topic: Doping (semiconductor)
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