Dmitri Z. Garbuzov - Later Years in Russia

Later Years in Russia

In subsequent years, Garbuzov developed the highest power diode lasers at wavelengths from 0.8 to 2.7 µm, introducing a new and revolutionary laser design to accomplish this, and made many contributions to new laser devices and businesses that produced them.

In 1979, Garbuzov became head of the Semiconductor Luminescence and Injection Emitters Laboratory at the A.F. Ioffe Physical Technical Institute. Heterojunctions of quaternary solid solutions of InGaAsP/InP were investigated under his leadership. Lasers based on such structures are the basis of today's optical communications.

He led research on re-radiation effects in double heterojunctions. His group at the Ioffe Institute established almost 100% external efficiency of luminescence in GaAlAs heterostructures. This gave birth to another practical application — a new class of semiconductor alphanumeric displays. In 1987, Garbuzov and colleagues were awarded the State Prize for this achievement, the second highest civilian award in the former Soviet Union.

Aluminum-free diode heterostructure lasers became the next step in his scientific life. He suggested and developed lasers with wavelengths of 0.75-1.0 µm, including those of visible (red) wavelengths.

In 1991 Garbuzov became a corresponding member of the Russian Academy of Sciences.