Adhesive Bonding - Technical Specifications

Technical Specifications

Materials

Substrate:

  • Si
  • SiO2
  • Glass

Intermediate layer:

  • Adhesive
Temperature
  • SU-8: 100 - 120 °C
  • BCB: 200 - 250 °C
Advantages
  • wide range of adhesives adjusted for MEMS and electronic components
  • feasibility at vacuum or different atmospheric gases
  • simple and low cost process
  • low bonding temperature ≤ 200 °C
  • absence of electric voltage and current
  • applicable to various wafer materials
  • compensation of surface non-uniformities and contamination
  • integrated circuit (IC) compatibility
  • excellent chemical resistance
  • high transparency
Drawbacks
  • penetration of moisture
  • large variance of the gap between the wafers
  • no hermetic seals with organic materials
  • limited long-term stability in harsh environments
  • limited temperature stability
  • relatively low bond strengths
Researches
  • bonding with sacrificial PDMS layer

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