Dependence On Temperature
As with the case of oxide thickness affecting threshold voltage, temperature has an effect on the threshold voltage of a CMOS device. Expanding on part of the equation in the body effect section
where is Boltzmann's constant, is Temperature, is the charge of an electron, is a doping parameter and is the intrinsic doping parameter for the substrate.
We see that the surface potential has a direct relationship with the temperature. Looking above, that while the threshold voltage does not have a direct relationship but is not independent of the effects. On average this variation is between −4 mV/°C and −2 mV/°C depending on doping level. For a change of 30 °C this results in significant variation from the 500mV design parameter commonly used for the 90 nanometer technology node.
Read more about this topic: Threshold Voltage
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