Semiconductor Detector - Semiconductor Radiation Detector

Semiconductor Radiation Detector

In these detectors, radiation is measured by means of the number of charge carriers set free in the detector, which is arranged between two electrodes. Ionizing radiation produces free electrons and holes. The number of electron-hole pairs is proportional to the intensity of the radiation to the semiconductor. As a result, a number of electrons are transferred from the valence band to the conduction band, and an equal number of holes are created in the valence band. Under the influence of an electric field, electrons and holes travel to the electrodes, where they result in a pulse that can be measured in an outer circuit, as described by the Shockley-Ramo Theorem. The holes travel in the opposite direction and can also be measured. As the amount of energy required to create an electron-hole pair is known, and is independent of the energy of the incident radiation, measuring the number of electron-hole pairs allows the intensity of the incident radiation to be found.

The energy required for production of electron-hole-pairs is very low compared to the energy required for production of paired ions in a gas detector. Consequently, in semiconductor detectors the statistical variation of the pulse height is smaller and the energy resolution is higher. As the electrons travel fast, the time resolution is also very good, and is dependent upon rise time. Compared with gaseous ionization detectors, the density of a semiconductor detector is very high, and charged particles of high energy can give off their energy in a semiconductor of relatively small dimensions.