History
The first power semiconductor device appeared in 1952 with the introduction of the power diode by R.N. Hall. It was made of Germanium and had a voltage capability of 200 volts and a current rating of 35 amperes.
The thyristor appeared in 1957. It is able to withstand very high reverse breakdown voltage and is also capable of carrying high current. However, one disadvantage of the thyristor in switching circuits is that once it becomes 'latched-on' in the conducting state; it cannot be turned off by external control, as the thyristor turn-off is passive, i.e., the power must be disconnected from the device.
The first bipolar transistor device with substantial power handling capabilities was introduced in the 1960s. This component overcomes some limitations of the thyristor, because it can be turned on or off with an applied signal.
With the improvements of the MOSFET (metal oxide semiconductor technology, initially developed to produce integrated circuits), the power MOSFET became available in the late 1970s. International Rectifier introduced a 25 A, 400 V power MOSFET in 1978. This device allows operation at higher frequencies than a bipolar transistor, but is limited to low voltage applications.
The IGBT (Insulated Gate Bipolar Transistor) was developed in the 1980s, and became widely available in the 1990s. This component has the power handling capability of the bipolar transistor and the advantages of the isolated gate drive of the power MOSFET.
Read more about this topic: Power Semiconductor Device
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