Molecular Beam Epitaxy

Molecular Beam Epitaxy

Molecular beam epitaxy (MBE) is one of several methods of depositing single crystals. It was invented in the late 1960s at Bell Telephone Laboratories by J. R. Arthur and Alfred Y. Cho. MBE is widely used in the manufacture of semiconductor devices, including transistors for cellular phones and WiFi. Recently, the world's most efficient solar cells have been demonstrated with MBE and are being commercialized.

Read more about Molecular Beam Epitaxy:  Method, ATG Instability

Other articles related to "molecular beam epitaxy, beam":

Molecular Beam Epitaxy - ATG Instability
... The ATG (Asaro-Tiller-Grinfeld) instability, also known as the Grinfeld instability, is an elastic instability often encountered during molecular beam epitaxy ... If there is a mismatch between the lattice sizes of the growing film and the supporting crystal, elastic energy will be accumulated in the growing film ...
Gallium Nitride - Synthesis - Molecular Beam Epitaxy
... Commercially, GaN crystals can be grown using molecular beam epitaxy ... First, an ion beam is applied to the growth surface in order to create nanoscale roughness ...

Famous quotes containing the word beam:

    Why beholdest thou the mote that is in thy brother’s eye, but considerest not the beam that is in thine own eye?
    Bible: New Testament Jesus, in Matthew, 7:3.

    From the Sermon on the Mount.