Molecular Beam Epitaxy
Molecular beam epitaxy (MBE) is one of several methods of depositing single crystals. It was invented in the late 1960s at Bell Telephone Laboratories by J. R. Arthur and Alfred Y. Cho. MBE is widely used in the manufacture of semiconductor devices, including transistors for cellular phones and WiFi. Recently, the world's most efficient solar cells have been demonstrated with MBE and are being commercialized.
Other articles related to "molecular beam epitaxy, beam":
... Commercially, GaN crystals can be grown using molecular beam epitaxy ... First, an ion beam is applied to the growth surface in order to create nanoscale roughness ...
... known as the Grinfeld instability, is an elastic instability often encountered during molecular beam epitaxy ...
Famous quotes containing the word beam:
“What do we plant when we plant the tree?
We plant the ship that will cross the sea,
We plant the mast to carry the sails,
We plant the planks to withstand the gales
The keel, the keelson, and beam and knee
We plant the ship when we plant the tree.”
—Henry Abbey (18421911)