Molecular Beam Epitaxy

Molecular Beam Epitaxy

Molecular beam epitaxy (MBE) is one of several methods of depositing single crystals. It was invented in the late 1960s at Bell Telephone Laboratories by J. R. Arthur and Alfred Y. Cho. MBE is widely used in the manufacture of semiconductor devices, including transistors for cellular phones and WiFi. Recently, the world's most efficient solar cells have been demonstrated with MBE and are being commercialized.

Read more about Molecular Beam Epitaxy:  Method, ATG Instability

Other articles related to "molecular beam epitaxy, beam":

Gallium Nitride - Synthesis - Molecular Beam Epitaxy
... Commercially, GaN crystals can be grown using molecular beam epitaxy ... First, an ion beam is applied to the growth surface in order to create nanoscale roughness ...
Molecular Beam Epitaxy - ATG Instability
... known as the Grinfeld instability, is an elastic instability often encountered during molecular beam epitaxy ...

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