Memristor - Implementations - Spin Memristive Systems - Spintronic Memristor

Spintronic Memristor

Yiran Chen and Xiaobin Wang, researchers at disk-drive manufacturer Seagate Technology, in Bloomington, Minnesota, described three examples of possible magnetic memristors in March, 2009 in IEEE Electron Device Letters. In one of the three, resistance is caused by the spin of electrons in one section of the device pointing in a different direction than those in another section, creating a "domain wall", a boundary between the two states. Electrons flowing into the device have a certain spin, which alters the magnetization state of the device. Changing the magnetization, in turn, moves the domain wall and changes the device's resistance.

This work attracted significant attention from the electronics press, including an interview by IEEE Spectrum. A first experimental proof of the Spintronic Memristor based on domain wall motion by spin currents in a Magnetic Tunnel Junction was given in 2011.

Read more about this topic:  Memristor, Implementations, Spin Memristive Systems