Experimental Tests For Memristors
Leon Chua has suggested the following three experimental tests to determine if a device may properly be categorized as a memristor:
1. The Lissajous curve in the voltage-current plane is a pinched hysteresis loop when driven by any bipolar periodic voltage or current and under any initial conditions.
2. The area of each lobe of the pinched hysteresis loop shrinks as the frequency of the forcing signal increases.
3. As the frequency tends to infinity, the pinched hysteresis loop degenerates to a straight line through the origin, whose slope depends on the amplitude and shape of the forcing signal.
According to Chua all resistive switching memories including ReRAM, MRAM, and phase change memory meet these criteria and should thus all be considered memristors. However, it is unclear whether there is sufficient evidence to support this claim since most experimental papers do not provide data for the Lissajous curves over a range of initial conditions or over a range of frequencies.
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