Process
An inverse pattern is first created in the sacrificial stencil layer (ex. photoresist), deposited on the surface of the substrate. This is done by etching openings through the layer so that the target material can reach the surface of the substrate in those regions, where the final pattern is to be created. The target material is deposited over the whole area of the wafer, reaching the surface of the substrate in the etched regions and staying on the top of the sacrificial layer in the regions, where it was not previously etched. When the sacrificial layer is washed away (photoresist in a solvent), the material on the top is lifted-off and washed together with the sacrificial layer below. After the lift-off, the target material remains only in the regions where it had a direct contact with the substrate.
- Substrate is prepared
- Sacrificial layer is deposited and an inverse pattern is created (ex. photoresist is exposed and developed. Depending on the resist various methods can be used, such as Extreme ultraviolet lithography - EUVL or Electron beam lithography - EBL. The photoresist is removed in the areas, where the target material is to be located, creating an inverse pattern.)
- Target material (usually a thin metal layer) is deposited (on the whole surface of the wafer). This layer covers the remaining resist as well as parts of the wafer that were cleaned of the resist in the previous developing step.
- The rest of the sacrificial material (ex. photoresist) is washed out together with parts of the target material covering it, only the material that was in the "holes" having direct contact with the underlying layer (substrate/wafer) stays
Read more about this topic: Lift-off (microtechnology)
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