Reverse Bias
IGCT are available with or without reverse blocking capability. Reverse blocking capability adds to the forward voltage drop because of the need to have a long, low doped P1 region.
IGCT capable of blocking reverse voltage are known as symmetrical IGCT, abbreviated S-IGCT. Usually, the reverse blocking voltage rating and forward blocking voltage rating are the same. The typical application for symmetrical IGCT is in current source inverters.
IGCT incapable of blocking reverse voltage are known as asymmetrical IGCT, abbreviated A-IGCT. They typically have a reverse breakdown rating in the 10's of volts. A-IGCT are used where either a reverse conducting diode is applied in parallel (for example, in voltage source inverters) or where reverse voltage would never occur (for example, in switching power supplies or DC traction choppers).
Asymmetrical IGCT can be fabricated with a reverse conducting diode in the same package. These are known as RC-ICT, for reverse conducting IGCT.
Read more about this topic: Integrated Gate-commutated Thyristor
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