IGBT Models
Rather than using a device physics-based model, SPICE simulates IGBTs using Macromodels, a method that combines an ensemble of components such as FETs and BJTs in a Darlington configuration. An alternative physics-based model is the Hefner model, introduced by Allen Hefner of the NIST. It is a fairly complex model that has shown very good results. Hefner's model is described in a 1988 paper and was later extended to a thermo-electrical model and a version using SABER.
Read more about this topic: Insulated-gate Bipolar Transistor
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