Physics
A hybrid silicon laser is an optical source that is fabricated from both silicon and group III-V semiconductor materials (e.g. Indium(III) phosphide, Gallium(III) arsenide). It comprises a silicon waveguide fused to an active, light-emitting, III-V epitaxial semiconductor wafer. The III-V epitaxial wafer is designed with different layers such that the active layer can emit light when it is excited either by shining light, e.g. a laser onto it; or by passing electricity through it. The emitted light from the active layer couples into the silicon waveguide due to their close proximity (<130 nm separation) where it can be guided to reflect off mirrors at the end of the silicon waveguide to form the laser cavity.
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